New Material Reducing Environmental Impact

Direct Bonded Silicon Carbide (SiC) Substrates “SiCkrest”

Silicon -Carbide (SiC) is a semiconductor material that is used in power semiconductors that control electric power. The market for SiC, as an excellent material that can reduce energy loss, is expected to expand, particularly for high-capacity types (large current, high withstand voltage), which are necessary for drive controllers in electric and hybrid vehicles.
Our direct bonded SiC substrate, SiCkrest, is able to realize a low resistance and a high strength throughout the entire substrate while maintaining the characteristics of a monocrystalline SiC. This is accomplished through bonding a low-resistance polycrystalline SiC support substrate with a thin, high-quality monocrystal. Furthermore, SiC monocrystal require a lot of energy to produce, but our technology can increase the supply to the market while reducing overall energy consumption by repeatedly using this rare monocrystal. This feature has attracted a lot of attention from the market.
* Registration of the “SiCkrest” trademark is currently pending.

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NEWS

June 24, 2024
Directors changed. (Retired President and Representative Director: Takayuki Iino, Promoted President and Representative Director: Kouya Shimizu, Newly appointed Director: Kenji Kambayashi)

COMPANY

We contribute to the realization of an affluent and sustainable society through the creation of innovative semiconductor substrates.

Sicoxs Corporation was established in June of 2012 with the goal of realizing new semiconductor substrates based on original ideas. In 2017, we began the construction of a prototypical mass-production line for direct bonded SiC substrates and we’re currently selling samples of those substrates to customers.

Company Name
Sicoxs Corporation
List of Directors
President and Representative Director
Kouya Shimizu
Director Vice-president
Naoka Inoue
Director
Kenji Kambayashi
Audit & Supervisory Board Member
Koichi Uzawa
Shareholder Composition
Sumitomo Metal Mining Co., Ltd.: 100%
Head Office Location
Shimbashi Sumitomo Building 7F
5-11-3 Shimbashi, Minato-ku, Tokyo
105-0004, Japan
TEL : +81-3-3437-5220
FAX : +81-3-3437-5222
Yusui Plant Location
c/o Phenitec Semiconductor Corp. Kagoshima Plant
1770-1 Kitakata, Yusui-cho, Aira, Kagoshima, 899-6202, Japan
Ome Plant Location
c/o Sumitomo Metal Mining Co., Ltd. Ome District Div.
1-6-1 Suehiro-cho, Ome-shi, Tokyo, 198-8601, Japan
Ohkuchi Plant (under construction) Location
1742-2, Ohkuchi-Ushio, Isa, Kagoshima, 895-2501, Japan
Capital
¥100million (at the end of March 2024)
Establishment
June 1, 2012
Employees
72 (at the end of March 2024)
Correspondent Bank
MUFG Bank
History
Jun. 2012
Company established.
Sep. 2012
Kaga Electronics Co., Ltd. investment started.
Apr. 2017
Yusui plant established.
Oct. 2017
Sumitomo Metal Mining Co., Ltd. acquired 51% of shares from Kaga Electronics Co., Ltd.
Dec. 2018
ISO9001:2015, JIS Q 9001:2015 (DESIGN / DEVELOPMENT AND MANUFACTURE (OUTSOURCING) OF SILICON CARBIDE SUBSTRATE.) certified.
Dec. 2019
ISO14001:2015, JIS Q 14001:2015 (DESIGN/DEVELOPMENT AND MANUFACTURE (OUTSOURCING) OF SILICON CARBIDE SUBSTRATE.) certified.
Oct. 2020
Ome plant established.
Mar. 2022
Sumitomo Metal Mining Co., Ltd. acquired shares from Kaga Electronics Co., Ltd. This is the current shareholder composition.

ACCESS

Sicoxs Corporation

Shimbashi Sumitomo Building 7F, 5-11-3 Shimbashi, Minato-ku, Tokyo, 105-0004, Japan

JR Shimbashi Station, Seven minute walk from Karasumori Exit